Float Zone (FZ) silicon is commonly used in the manufacture of discrete power devices, high efficiency solar, RF chips and optical products. FZ silicon is a high purity alternative to Czochalski (CZ) grown silicon whereas the concentration of carbon and oxygen impurities are extremely low. The purity of FZ allows the silicon to go through a lighter doping process, sometimes producing resistivity measurements reaching heights of up to 50,000 ohm-cm.
 
FSM offers FZ wafers ranging in diameter from 50mm to 200mm. Intrinsic wafers are available. Below please find examples of FSM standard FZ wafer specifications.  

Below are examples of FSM standard products: 
               Silicon Wafer
               Diameter:150 mm
               Type/dopant: N or P
               Orientation: <100>
               Resistivity: 1,000-3,000 ohm-cm
               Thickness: 675 +/-25um
               Flats: 1 / SEMI standard
               TTV: <10 um
               Front Side: Polished
               Back Side: Etched or Polished
 
Please CONTACT FSM for further information on Float Zone Wafers (FZ) or to discuss your current requirements.