These are the silicon wafers which have been through either a Wet Thermal Oxide, or a Dry Thermal Oxide process, to “grow” a Thermal Oxide, or Silicon Dioxide (Sio2), layer on the surface of the wafer. This is done by exposing the wafer to a combination of oxidizing agents and heat. The oxide is most commonly used as a dielectric layer and in MEMs devices. Thermal Oxide is grown on both sides of the wafer, but can then be removed from one side if a single side oxide layer is needed.
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|
200MM | 300MM |
|---|---|---|
| Thickness | 50-50000nm | 50-40000nm |
| Thickness deviation（1 piece） | < 3％ | < 3％ |
| Thickness deviation（More than 2 pieces） | < 3％ | < 3％ |
| Grow Method | CZ | CZ |
| Diameter(mm) | 200±0.2mm | 300±0.2mm |
| Type | P | P |
| Orientation | <100> | <100> |
| Resistivity（Ω・cｍ） | 1-100 | 1-100 |
| Thickness（μｍ） | 725±25 | 775±25 |
| TTV（μｍ） | ≦25 | ≦25 |
| BOW（μｍ） | ≦40 | ≦40 |
| WARP（μｍ） | ≦40 | ≦40 |
| Surface Metals | ≦5.0E 10 atom/cm2 | <1 E10 Atoms/cm2 |
|
|
100MM | 150MM |
|---|---|---|
| Thickness | 50-30000nm | 50-30000nm |
| Thickness deviation（1 piece） | < 5％ | < 5％ |
| Thickness deviation（More than 2 pieces） | < 5％ | < 5％ |
| Grow Method | CZ | CZ |
| Diameter(mm) | 100±0.3mm | 150±0.3mm |
| Type | P | P |
| Orientation | <100> | <100> |
| Resistivity（Ω・cｍ） | 1-100 | 1-100 |
| Thickness（μｍ） | 525±25 | 675±25 |
| TTV（μｍ） | ≦25 | ≦25 |
| BOW（μｍ） | ≦40 | ≦40 |
| WARP（μｍ） | ≦40 | ≦40 |
| Surface Metals | ≦5.0E 10 atom/cm2 | ≦5.0E 10 atom/cm2 |
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