Our GaN (Gallium Nitride) wafers are grown using the Hydride Vapor Phase Epitaxy (HVPE) method, available in semi-insulating (Fe-doped) and N-type (Ge-doped or undoped) variants with C-plane <0001> orientation. These freestanding GaN wafers feature low dislocation density (EPD as low as 1~9E5/cm²), sub-nanometer front surface roughness (Ra ≤0.2nm), and tightly controlled TTV (≤15μm), bow, and warp (≤20μm), making them a high-quality, epi-ready substrate for demanding power and RF device applications.
Applications
- Power electronic devices (Schottky diodes, vertical power transistors)
- RF and high-frequency devices (HEMTs for 5G/6G applications)
- High-brightness LEDs and laser diodes
- High electron mobility transistors (HEMT) requiring low-defect,native GaN substrates
Why Choose Us?
Free‑standing GaN substrates grown by HVPE process deliver superior crystal quality.
Dislocation density as low as 1‑9×10⁵/cm², reaching industry‑leading performance.
Extremely low front‑surface roughness (Ra ≤0.2 nm), compatible with high‑precision epitaxial growth.
Suitable for core application scenarios of next‑generation power devices and 5G/6G RF devices.
