Our GaAs (Gallium Arsenide) wafers are single-crystal substrates grownusing VGF or LEC methods, available in <100> and <111> orientations from 2" to 6" in diameter. Offered undoped or doped with Zn, Si, or Te, these wafers feature front-side surfaces polished in epi-ready prime grade, with mobility ranging from 1500 to 5000 cm²/V·sec depending on dopant type. Precision-controlled primary and secondary flats ensure accurate crystal orientation identification, making these wafers a reliable choice for demanding compound semiconductor applications.

Applications

- RF and microwave devices (power amplifiers, MMICs)
- LED and laser diode substrates
- High-efficiency solar cells (multi-junction and single-junction)
- High-electron-mobility transistors (HEMT) and heterojunction bipolar transistors (HBT)

Why Choose Us?

Dual VGF/LEC process routes for flexible selection based on application requirements. 

High‑precision primary and secondary orientation flats facilitate crystal orientation identification and automated production‑line processing. 

Wide mobility range (1500‑5000 cm²/V·sec) to meet diverse device performance requirements. 

Front‑side epitaxial‑grade polishing ensures stable and reliable surface quality.