Product Introduction

Our sapphire wafers are available in diameters from 50.8mm (2") to 200mm (8"), with thickness ranging from 430μm to 1300μm depending on size. Offered in C, R, M, and A crystal orientations with double-side or single-side polished surfaces, these wafers feature exceptional surface quality (Ra ≤0.3nm), low warp (≤10μm), and tight TTV control(≤3μm), making them a reliable substrate for optoelectronic and optical applications.

Applications

- LED substrates (particularly C-plane orientation)

- Optical windows and lenses for high-durability applications

- Substrates for GaN epitaxial growth

- Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

Why Choose Us? 

Complete size specifications covering the full range from 2‑inch to 8‑inch. 

Excellent surface quality (Ra ≤0.3 nm), with TTV controlled within 3 μm. 

Wide selection of crystal orientations to meet requirements for LED, optics and other application scenarios. 

High mechanical and chemical stability, compatible with multiple harsh process environments.

Parameter Specification
SAPPHIRE SPECIFICATIONS
DIAMETER 50.8 ± 0.1MM 100 ± 0.1MM 150 ± 0.1MM 200 ± 0.1MM
Thickness 430 ± 25μm 650 ± 25μm 1300 ± 25μm 1300 ± 25μm
Ra ≤0.3nm ≤0.3nm ≤0.3nm ≤0.3nm
Warp ≤10μm ≤10μm ≤10μm ≤10μm
TTV ≤3μm ≤3μm ≤3μm ≤3μm
Crystal Orientation C Side / R Side / M Side / A Side
Suface Double Side Polished / Single Side Polished
Edge 45° chamfer